NEO Semiconductor Unveils Breakthrough 3D X-DRAM Technology

NEO Semiconductor unveiled a groundbreaking Floating Body Cell Mechanism for 3D X-DRAM at the IEEE International Memory Workshop, increasing data retention by 40,000 times and sensing window by 20 times. The technology enables faster and more reliable DRAM while reducing refresh frequency to save power.

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Aqsa Younas Rana
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NEO Semiconductor Unveils Breakthrough 3D X-DRAM Technology

NEO Semiconductor Unveils Breakthrough 3D X-DRAM Technology

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, announced a groundbreaking Floating Body Cell Mechanism for 3D X-DRAM at the 16th IEEE International Memory Workshop (IMW) in Seoul, Republic of Korea. CEO Andy Hsu presented the breakthrough technology on May 13, 2024.

The Floating Body Cell Mechanism, also known as Back-gate Channel-depth Modulation (BCM), increases data retention by an astounding 40,000 times and sensing window by 20 times compared to conventional DRAM. This patented invention enables faster and more reliable DRAM while reducing the refresh frequency to save power.

Why this matters: This breakthrough in 3D X-DRAM technology has the potential to significantly impact the performance and efficiency of memory systems in various industries, from consumer electronics to data centers. As the demand for faster and more reliable data storage continues to grow, innovations like this can play a crucial role in shaping the future of computing and data management.

NEO Semiconductor's 3D X-DRAM technology can achieve an impressive 128 Gb density with 300 layers, which is 8 times the density of today's DRAM. This breakthrough has the potential to significantly reduce the chip's footprint and power consumption in memory-intensive applications.

Explaining the technology, CEO Andy Hsu stated, "Unlike the traditional 2D Floating Body Cell that uses body effect to change the cell current, our BCM mechanism employs a back-gate voltage to modulate the channel depth. This patented invention increases the sensing window and data retention significantly, that will result in faster and more reliable DRAM, and reduce the refresh frequency to save power."

Founded in 2012 by Andy Hsu and a team in San Jose, California, NEO Semiconductor is a high-tech company focused on advancing 3D NAND flash and DRAM technologies. The company owns more than 24 U.S. patents and has made significant breakthroughs in recent years.

In 2020, NEO Semiconductor introduced its X-NAND architecture, a breakthrough in 3D NAND flash technology. Two years later, the company launched its X-DRAM technology, paving the way for the development of the groundbreaking 3D X-DRAM unveiled at the IEEE International Memory Workshop.

The introduction of NEO Semiconductor's 3D X-DRAM technology marks a significant milestone in the memory industry. With its ability to dramatically increase data retention and sensing window while reducing power consumption, this breakthrough has the potential to revolutionize the performance and efficiency of memory systems in a wide range of applications, from consumer electronics to data centers.

Key Takeaways

  • NEO Semiconductor unveils 3D X-DRAM with 40,000x better data retention.
  • Technology increases sensing window by 20x and reduces power consumption.
  • 3D X-DRAM achieves 128 Gb density with 300 layers, 8x current DRAM density.
  • Innovation enables faster, more reliable DRAM with reduced refresh frequency.
  • Breakthrough has potential to revolutionize memory systems in various industries.