Shenzhen University Researchers Set New Record with Novel OLED Materials

Researchers at Shenzhen University achieved a record 42.6% external quantum efficiency in OLED materials, featuring narrowband emission and high efficiency. The breakthrough paves the way for next-generation displays with enhanced brightness, contrast, and color accuracy.

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Aqsa Younas Rana
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Shenzhen University Researchers Set New Record with Novel OLED Materials

Shenzhen University Researchers Set New Record with Novel OLED Materials

Researchers at Shenzhen University have achieved a significant breakthrough in the development of organic light-emitting diode (OLED) materials, setting a new record with an external quantum efficiency of 42.6%. The novel OLED materials feature narrowband emission and high efficiency, marking an important advancement for ultrahigh-definition display technology.

The research team, led by Professor Chuluo Yang and Associate Professor Xiaosong Cao, introduced a π-conjugation extension strategy using boron-nitrogen covalent bonds, focusing on innovative molecular structures. Through post-functionalization reaction pathways, they developed high-order boron-nitrogen fused polycyclic aromatic frameworks known as DABNA-3B and BCzBN-3B.

Why this matters: This breakthrough in OLED materials has the potential to revolutionize the display technology industry, enabling the creation of next-generation displays with unparalleled brightness, contrast ratios, and color accuracy. As a result, consumers can expect to see significant improvements in their viewing experiences, from enhanced video quality to more immersive gaming experiences.

Theoretical calculations revealed that the incorporation of boron-nitrogen covalent bonds improves molecular planarity and rigidity, promoting electron delocalization. The target compounds exhibited substantial improvements in photophysical parameters, such as fluorescence quantum yield, full width at half-maximum, reverse intersystem crossing rate, and horizontal dipole orientation.

BCzBN-3B achieved an exceptionally narrow full-width at half maximum of only 8 nm in n-hexane solution and a high reverse intersystem crossing rate constant of 0.9 × 106s−1. The OLED based on BCzBN-3B achieved a maximum external quantum efficiency of 42.6%, setting a new efficiency record for OLED devices employing a binary emitting layer. At a brightness of 1000 cd m−2, the device still maintained an efficiency of 30.5%, showing a small efficiency roll-off.

This study provides a new design concept for effectively balancing material color purity and exciton utilization efficiency, which is of significant importance for advancing ultrahigh-definition display technology. The research results have been published in National Science Review, with graduate students Xingyu Huang and Jiahui Liu as the co-first authors, and Associate Professor Xiaosong Cao and Professor Chuluo Yang as the corresponding authors.

The development of high dynamic range (HDR) display technology has significantly enhanced the contrast ratios and peak brightness of modern displays. However, the majority of multimedia content remains in low dynamic range (LDR), necessitating the need for efficient LDR-to-HDR conversion processes. The current HDR standard supports luminance levels up to 10,000 cd/m2, but most HDR content is limited to a maximum brightness of around 1000 cd/m2.

The breakthrough in OLED materials and LDR-to-HDR conversion technology is expected to have a significant impact on the development of ultrahigh-definition displays. With a record external quantum efficiency of 42.6% and the ability to create HDR video sequences with a peak luminance of up to 6000 cd/m2, these advancements pave the way for next-generation displays with unparalleled brightness, contrast ratios, and color accuracy.